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| SUD50N03-06AP New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES ID (A)a, e 90 77 rDS(on) (W) 0.0057 @ VGS = 10 V 0.0078 @ VGS = 4.5 V Qg (Typ) 30 D TrenchFETr Power MOSFET D Optimized for Low-Side Synchronous Rectifier Operation D 100% Rg Tested COMPLIANT RoHS APPLICATIONS D DC/DC Converters D Synchronous Rectifiers TO-252 D Drain Connected to Tab G D S G Top View Ordering Information: SUD50N03-06AP--E3 (Lead (Pb)-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25_C Continuous Drain Current (TJ = 175_C) TC = 70_C TA = 25_C TA = 70_C Pulsed Drain Current Continuous Source-Drain Diode Current Source Drain Avalanche Current Pulse Single Pulse Avalanche Energy L = 0 1 mH 0.1 TC = 25_C Maximum Power Dissipation TC = 70_C TA = 25_C TA = 70_C Operating Junction and Storage Temperature Range TJ, Tstg PD TC = 25_C TA = 25_C IDM IS IAS EAS ID Symbol VDS VGS Limit 30 "20 Unit V 90a, e 75a, e 30b, c 25b, c 100 55a, e 6.7b, c 45 101 83 58 10b, c 7b, c -55 to 175 _C W mJ A THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Case t p 10 sec Steady State Symbol RthJA RthJC Typical 12 1.5 Maximum 15 1.8 Unit _C/W Notes: a. Based on TC = 25_C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 sec d. Maximum under steady state conditions is 50_C/W. e. Calculated based on maximum junction temperature. Package limitation current is 50 A. Document Number: 73540 S-52237--Rev. A, 24-Oct-05 www.vishay.com 1 SUD50N03-06AP Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea VDS DVDS/TJ DVGS(th)/TJ VGS(th) IGSS IDSS ID(on) rDS(on) gfs VGS = 0 V, ID = 250 mA ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 4.5 V, ID = 20 A VDS = 15 V, ID = 30 A 50 0.0046 0.0062 70 0.0057 0.0078 S 1.2 30 25 - 6.3 2.4 "100 1 10 mV/_C V nA A mA A W V Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDD = 15 V, RL = 0.6 W ID ^ 25 A, VGEN = 4.5 V, Rg = 1 W VDD = 15 V, RL = 0.5 W ID ^ 30 A, VGEN = 10 V, Rg = 1 W f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 30 A VDS = 15 V, VGS = 4.5 V, ID= 25 A VDS = 15 V, VGS = 0 V, f = 1 MHz 3800 615 305 62 30 11 9 0.9 12 10 30 8 26 230 25 9 1.4 18 15 45 12 40 345 40 14 ns W 95 45 nC pF p Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time Currenta IS ISM VSD trr Qrr ta tb IF = 6 7 A di/dt = 100 A/ms TJ = 25_C 6.7 A, A/ms, IS = 6.7 A 0.9 65 38 50 15 ns TC = 25_C 55c 100 1.5 100 60 A V ns nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Calculated based on maximum junction temperature. Package limitation current is 50 A. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73540 S-52237--Rev. A, 24-Oct-05 SUD50N03-06AP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 100 20 Vishay Siliconix Transfer Characteristics I D - Drain Current (A) I D - Drain Current (A) 80 VGS = 10 V thru 4 V 16 TC = -55_C 12 TC = 25_C 8 TC = 125_C 60 40 3V 20 4 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.015 5000 Capacitance rDS(on) - On-Resistance (W) 0.012 C - Capacitance (pF) 4000 Ciss 0.009 VGS = 4.5 V 0.006 VGS = 10 V 3000 2000 0.003 1000 Coss 0.000 0 20 40 60 80 100 0 0 Crss 5 10 15 20 25 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 1.9 On-Resistance vs. Junction Temperature ID = 20 A 8 rDS(on) - On-Resistance (Normalized) 1.7 VGS = 4.5 V VGS = 10 V 1.5 VGS (V) 6 VDS = 15 V 1.3 4 VDS = 24 V 1.1 2 0.9 0 0 13 26 Qg (nC) Document Number: 73540 S-52237--Rev. A, 24-Oct-05 39 52 65 0.7 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature www.vishay.com 3 SUD50N03-06AP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 100.000 0.05 rDS(on) vs VGS vs. Temperature 10.000 I S - Source Current (A) TJ = 150_C 1.000 TJ = 25_C rDS(on) On-Resistance (W) 0.04 0.03 0.100 0.02 125_C 0.01 25_C 0.010 0.001 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 6 7 8 9 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 2.3 2.1 500 1.9 ID = 250 mA VGS(th) - (V) 1.7 1.5 1.3 1.1 0.9 100 0.7 0.5 -50 0 0.001 Power (W) 400 600 Single Pulse Power, Junction-to-Ambient 300 200 TA = 25_C Single Pulse -25 0 25 50 75 100 125 150 175 0.01 0.1 1 Time (sec) 10 100 1000 TJ - Temperature (_C) Safe Operating Area 1000 *Limited by rDS(on) 100 10 s 100 s 1 ms 10 ms 100 ms 1s 10s 100s DC TA = 25_C Single Pulse 10 ID (A) 1 0.10 0.01 0.001 0.1 1 VDS (V) 10 100 *VGS u minimum VGS at which rDS(on) is specified www.vishay.com Document Number: 73540 S-52237--Rev. A, 24-Oct-05 4 SUD50N03-06AP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Current De-Rating 100 90 80 75 Drain Current (A) 70 60 Power 50 40 30 25 20 10 0 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175 Vishay Siliconix Power De-Rating 50 Limited by Package TC - Case Temperature (_C) TC - Case Temperature (_C) Document Number: 73540 S-52237--Rev. A, 24-Oct-05 www.vishay.com 5 SUD50N03-06AP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 0.5 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Case 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.5 0.2 0.1 0.05 0.02 0.1 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73540. www.vishay.com Document Number: 73540 S-52237--Rev. A, 24-Oct-05 6 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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